NTE5456 SCR DATASHEET

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NTE5456 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 300 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 20 A
Critical rate of rise of off-state voltage dV/dt 8 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 5 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 0.05 mA
Holding current IH 3 mA
Package TO-202

NTE5456 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5456 Datasheet. Page #1

NTE5456
 datasheet

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NTE5456
 datasheet #2

Description

NTE5452 thru NTE5458 Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse-blocking triode thyristors may be switched from off-state to conduction by a current pulse applied to the gate terminal. They are de- signed for control applications in lighting, heating, cooling, and static switching relays. Absolute Ma