NTE5463 SCR DATASHEET

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NTE5463 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 16 W
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 10 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 2 K/W
Triggering gate voltage VGT 0.9 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 8 mA
Holding current IH 10 mA
Package TO-220

NTE5463 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5463 Datasheet. Page #1

NTE5463
 datasheet

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NTE5463
 datasheet #2

Description

NTE5461 thru NTE5468 Silicon Controlled Rectifier (SCR) 10 Amp, TO220 Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half- wave AC control applications such as motor controls, heating controls, and power supplies; or wher- ever half-wave silicon gate-controlled, solid-state devices are needed. These devices are supplied in a TO220 type package. Features; D Glass Passivated Junctions and Center Gate Fire for Greater Parameter U