NTE5475 SCR DATASHEET

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NTE5475 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 500 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 0.75 V
Peak on-state voltage drop VTM 1.4 V
Triggering gate current IGT 10 mA
Holding current IH 10 mA
Package TO-208AB

NTE5475 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5475 Datasheet. Page #1

NTE5475
 datasheet

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NTE5475
 datasheet #2

Description

NTE5470 thru 5476 Silicon Controlled Rectifier (SCR) 5 Amp, TO64 Description: The NTE5470 through NTE5476 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: D Uniform Low-Level Noise-Immune Gate Triggering D Low Forward “ON” Voltage D High Surge-Current Capability Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified) Peak Repetitive Forward an