NTE5494 SCR DATASHEET

DATASHEET SEARCH FORM

NTE5494 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum average on-state current IT(AVR) 16 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 150 A
Critical rate of rise of off-state voltage dV/dt 30 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -65..125 °C
Junction to case thermal resistance RTH(j-c) 2 K/W
Triggering gate voltage VGT 0.65 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 40 mA
Holding current IH 7.3 mA
Package TO-208AA

NTE5494 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE5494 Datasheet. Page #1

NTE5494
 datasheet

Page #2

NTE5494
 datasheet #2

Description

NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp, TO48 Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half-wave AC control applications such as motor controls, heating controls, power supplies, or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features: D Glass-Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute