NTE5498 SCR DATASHEET

DATASHEET SEARCH FORM

NTE5498 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 10 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum average on-state current IT(AVR) 7.6 A
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 120 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 60 K/W
Junction to case thermal resistance RTH(j-c) 3 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 10 mA
Holding current IH 40 mA
Package TO-220

NTE5498 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE5498 Datasheet. Page #1

NTE5498
 datasheet

Page #2

NTE5498
 datasheet #2

Description

NTE5498 & NTE5499 Silicon Controlled Rectifier (SCR) 12 Amp, TO220 Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Repetitive Off-State Voltage (TJ = -40° to +125°C, RGK = 1kΩ), VDRM, VRRM NTE5498 . . . . . . . . . . .