NTE5513 SCR DATASHEET

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NTE5513 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 13 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 3.2 A
Maximum RMS on-state current IT(RMS) 5 A
Non repetitive surge peak on-state current ITSM 60 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 4 K/W
Triggering gate voltage VGT 1.2 V
Peak on-state voltage drop VTM 2.15 V
Triggering gate current IGT 8 mA
Holding current IH 10 mA
Package TO-213AA

NTE5513 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5513 Datasheet. Page #1

NTE5513
 datasheet

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NTE5513
 datasheet #2

Description

NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp, TO66 Description: The NTE5511 thru NTE5513 all-diffused, three junction, silicon controlled rectifiers (SCR’s) are in- tended for use in power-control and power-switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for High-Volume System