NTE5517 SCR DATASHEET

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NTE5517 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 35 A
Non repetitive surge peak on-state current ITSM 350 A
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 0.9 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 25 mA
Holding current IH 50 mA

NTE5517 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5517 Datasheet. Page #1

NTE5517
 datasheet

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NTE5517
 datasheet #2

Description

NTE5517 thru NTE5519 Silicon Controlled Rectifier (SCR) 35 Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +100°C), VDRM NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5519 . . . . . . . . . . . . .