NTE5547 SCR DATASHEET

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NTE5547 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 35 A
Non repetitive surge peak on-state current ITSM 300 A
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..150 °C
Junction to case thermal resistance RTH(j-c) 1.4 K/W
Triggering gate voltage VGT 2 V
Triggering gate current IGT 30 mA
Holding current IH 50 mA
Package TO-208AA

NTE5547 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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Description

NTE5541 thru NTE5548 Silicon Controlled Rectifier (SCR) 35 Amp, TO48 Description: The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged in a TO48 type case designed for industrial and consumer applications such as power supplies; battery chargers; temper- ature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +100C) VDRM NTE5541 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .