NTE5552-I SCR DATASHEET

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NTE5552-I ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum average on-state current IT(AVR) 16 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 320 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 60 K/W
Junction to case thermal resistance RTH(j-c) 1.9 K/W
Triggering gate voltage VGT 1.3 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 40 mA
Holding current IH 50 mA
Package TO-220F

NTE5552-I Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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Description

NTE5552-I, NTE5554-I, NTE5556-I Silicon Controlled Rectifier (SCR) 25 Amp, TO220AB Isolated Tab Description: The NTE5552-I thru NTE5556-I are 25 Amp SCR’s designed primarily for half-wave AC control applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition, voltage regulation, and welding equipment. Features: D Suitable for General Purpose AC Switching D IGT 40mA Max. D Isolated Tab Absolute Maximum Ratings: (TA = +25_C unless otherwise