NTE5553 SCR DATASHEET

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NTE5553 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 100 W
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 160 A
Maximum RMS on-state current IT(RMS) 780 A
Non repetitive surge peak on-state current ITSM 4650 A
Critical repetitive rate of rise of on-state current dI/dt 500 A/µs
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.1 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 150 mA
Holding current IH 600 mA
Package TO-200AB

NTE5553 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

NTE5551 & NTE5553 Silicon Controlled Rectifier (SCR) 750 Amp, TO200AB Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM NTE5551 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5553 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Non-Repetitive P