NTE5558 SCR DATASHEET

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NTE5558 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 16 A
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 300 A
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 1.5 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 40 mA
Holding current IH 35 mA
Package TO-220

NTE5558 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5558
 datasheet

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NTE5558
 datasheet #2

Description

NTE5550 thru NTE5558 Silicon Controlled Rectifier (SCR) 25 Amp, TO220 Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half-wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: D Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability. D Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability. D Blocking Voltage