NTE5566 SCR DATASHEET

DATASHEET SEARCH FORM

NTE5566 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 35 A
Non repetitive surge peak on-state current ITSM 300 A
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..150 °C
Junction to case thermal resistance RTH(j-c) 1.6 K/W
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 30 mA
Holding current IH 50 mA
Package TO-208AA

NTE5566 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE5566 Datasheet. Page #1

NTE5566
 datasheet

Page #2

NTE5566
 datasheet #2

Description

NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR) 35 Amp, TO48 Isolated Stud Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO-48 isolated stud TO-48 type package designed for industrial and consumer applications such as power supplies, bat- tery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5562 . . . . . . . . . . .