NTE5570 SCR DATASHEET

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NTE5570 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 12 W
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum average on-state current IT(AVR) 80 A
Maximum RMS on-state current IT(RMS) 125 A
Non repetitive surge peak on-state current ITSM 1600 A
Critical repetitive rate of rise of on-state current dI/dt 300 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.3 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 120 mA
Holding current IH 150 mA
Package TO-209AC

NTE5570 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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 datasheet #2

Description

NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier (SCR) 125 Amp, TO94 Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .