NTE5579 SCR DATASHEET

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NTE5579 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 70 A
Maximum RMS on-state current IT(RMS) 125 A
Non repetitive surge peak on-state current ITSM 1400 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.3 K/W
Triggering gate voltage VGT 0.2 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 125 mA
Package TO-83

NTE5579 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5579 Datasheet. Page #1

NTE5579
 datasheet

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NTE5579
 datasheet #2

Description

NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier (SCR) 125 Amp, TO83 Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5577 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5579 . . . . . . . . . . . . . . . . . . .