NTE5593 SCR DATASHEET

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NTE5593 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 16 W
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 350 A
Maximum RMS on-state current IT(RMS) 550 A
Non repetitive surge peak on-state current ITSM 9100 A
Critical repetitive rate of rise of on-state current dI/dt 150 A/µs
Critical rate of rise of off-state voltage dV/dt 300 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.1 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.4 V
Triggering gate current IGT 150 mA
Package TO-209AE

NTE5593 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5593 Datasheet. Page #1

NTE5593
 datasheet

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NTE5593
 datasheet #2

Description

NTE5587, NTE5589, NTE5593 Silicon Controlled Rectifier (SCR) 550 Amp, TO118 Features: D Low On-State Voltage D High di/dt D High dv/dt D Excellent Surge and I2t Ratings Applications: D Power Supplies D Battery Chargers D Motor Controls Absolute Maximum Ratingsand Electrical Characteristics: Repetitive Peak Voltages, VDRM & VRRM NTE5587 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE55