NTE5594 SCR DATASHEET

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NTE5594 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 120 W
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum average on-state current IT(AVR) 820 A
Maximum RMS on-state current IT(RMS) 1640 A
Non repetitive surge peak on-state current ITSM 11500 A
Critical repetitive rate of rise of on-state current dI/dt 500 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.04 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 200 mA
Holding current IH 1000 mA
Package TO-200AC

NTE5594 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5594 Datasheet. Page #1

NTE5594
 datasheet

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NTE5594
 datasheet #2

Description

NTE5561, NTE5594 thru NTE5596 Silicon Controlled Rectifier (SCR) 850 Amp, TO200AC Ratings: (Maximum Values at TJ = +125°C unless otherwise specified) Repetitive Peak Voltage, VDRM NTE5561 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V NTE5594 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5595 . . . .