NTE56006 Triac DATASHEET

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NTE56006 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 15 A
Non repetitive surge peak on-state current ITSM 150 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 2 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 50 mA
Holding current IH 40 mA
Package TO-220

NTE56006 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE56006 Datasheet. Page #1

NTE56006
 datasheet

Page #2

NTE56006
 datasheet #2

Description

NTE56004 thru NTE56010 TRIAC, 15 Amp The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control ap- plications, such as solid–state relays, motor controls, heating controls and power supplies; or wherev- er full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: D Blocking