NTE5629 Triac DATASHEET

DATASHEET SEARCH FORM

NTE5629 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 15 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 40 A
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to case thermal resistance RTH(j-c) 4 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 3 mA
Holding current IH 5 mA
Package TO-202

NTE5629 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE5629 Datasheet. Page #1

NTE5629
 datasheet

Page #2

NTE5629
 datasheet #2

Description

NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Volt