NTE5645 Triac DATASHEET

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NTE5645 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 40 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 10 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 50 mA
Holding current IH 50 mA
Package TO-220F

NTE5645 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5645 Datasheet. Page #1

NTE5645
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Description

NTE5645 TRIAC – 10A Isolated Tab Description: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de- signed for control applications in lighting, heating, cooling