NTE5653 Triac DATASHEET

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NTE5653 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 3 A
Non repetitive surge peak on-state current ITSM 30 A
Critical rate of rise of off-state voltage dV/dt 3 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..90 °C
Junction to case thermal resistance RTH(j-c) 4 K/W
Triggering gate voltage VGT 2.2 V
Peak on-state voltage drop VTM 1.85 V
Triggering gate current IGT 3 mA
Holding current IH 5 mA
Package TO-205AA

NTE5653 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5653 Datasheet. Page #1

NTE5653
 datasheet

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NTE5653
 datasheet #2

Description

NTE5650 thru NTE5653 TRIAC – 100VRM, 2.5A Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed in TO–5 outline cans. The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off– state to conduction for either polarity of applied voltage with positive or negative gate–trigger current and