NTE5656 Triac DATASHEET

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NTE5656 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 8 A
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 75 K/W
Triggering gate voltage VGT 2.2 V
Peak on-state voltage drop VTM 1.9 V
Triggering gate current IGT 5 mA
Holding current IH 15 mA
Package TO-92

NTE5656 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5656 Datasheet. Page #1

NTE5656
 datasheet

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NTE5656
 datasheet #2

Description

NTE5655 thru NTE5657 TRIAC – 800mA Sensitive Gate Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated chips. These NTE devices are bi–directional triode thyristors and may be switched from off–state to conduc- tion for either polarity of applied voltage with positive or negative gate trigger current. They are de- signed for contro