NTE6403 Triac DATASHEET

DATASHEET SEARCH FORM

NTE6403 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 5 A
Maximum operating junction and storage temperature range Tstg, Tj -55..125 °C
Holding current IH 0.5 mA
Package TO-92

NTE6403 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE6403 Datasheet. Page #1

NTE6403
 datasheet

Page #2

NTE6403
 datasheet #2

Description

NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS) Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coeffi- cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. The NTE6403 is specifically designed and character