NTE6408 Reverse-dinistor DATASHEET

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NTE6408 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Reverse-dinistor
Maximum repetitive peak and off-state voltage VDRM 32 V
Maximum RMS on-state current IT(RMS) 2 A
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 278 K/W
Package DO-204AH

NTE6408 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE6408 Datasheet. Page #1

NTE6408
 datasheet

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NTE6408
 datasheet #2

Description

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Select