NTE6415 Reverse-dinistor DATASHEET

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NTE6415 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Reverse-dinistor
Maximum repetitive peak and off-state voltage VDRM 45 V
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 13 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Maximum operating junction and storage temperature range Tstg, Tj -30..125 °C
Junction to case thermal resistance RTH(j-c) 15 K/W
Peak on-state voltage drop VTM 1.5 V
Holding current IH 50 mA
Package DO-204AH

NTE6415 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

NTE6415 thru NTE6419 Bidirectional Thyristor Diodes (SIDAC) Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on–state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current