NYC0102B SCR DATASHEET

DATASHEET SEARCH FORM

NYC0102B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 0.25 A
Non repetitive surge peak on-state current ITSM 7 A
Triggering gate voltage VGT 0.8 V
Package SOT-23

NYC0102B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NYC0102B Datasheet. Page #1

NYC0102B
 datasheet

Page #2

NYC0102B
 datasheet #2

Description

NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly-sensitive triggering in low-power switching applications. http://onsemi.com Features • High dv/dt 0.25 AMP, 200 VOLT SCRs • Gating Current < 200 mA • Miniature SOT-23 Package for High Density PCB • SZ Prefix for Automotive and Other Applications Requiring Unique G Site and Control Change Requirements; AEC-Q101 Qualified and A K PPAP Capable • These De