NYE08-10B6ST1G DATASHEET

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NYE08-10B6ST1G ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Package SOT-223

NYE08-10B6ST1G Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NYE08-10B6ST1G Datasheet. Page #1

NYE08-10B6ST1G
 datasheet

Page #2

NYE08-10B6ST1G
 datasheet #2

Description

NYE08-10B6ST1G Protected Triac Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com Features PROTECTED TRIAC • Sensitive Gate Trigger Current in Two Quadrants 0.8 AMPERE RMS • Blocking Voltage to 600 V 600 VOLTS • Surface Mount Package • Compliant with IEC6100-4-5 OUT COM • These are P