NYT6-5D6DT4G DATASHEET

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NYT6-5D6DT4G ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
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NYT6-5D6DT4G Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NYT6-5D6DT4G Datasheet. Page #1

NYT6-5D6DT4G
 datasheet

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NYT6-5D6DT4G
 datasheet #2

Description

NYT6-5D6DTG, NYT6-5D6DT4G Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light http://onsemi.com and speed control. TRIACS Features 6.0 AMPERES RMS • Passivated Die for Reliability and Uniformity • Four-Quadrant Triggering 600 VOLTS • Blocking Voltage to 600 V • On-State Current Rating of 6.0 A RMS at 93°C MT2 MT1 • Low Level Triggerin