PAH400N8 SCR-module DATASHEET

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PAH400N8 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 400 A
Maximum RMS on-state current IT(RMS) 630 A
Non repetitive surge peak on-state current ITSM 7500 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.08 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.43 V
Triggering gate current IGT 150 mA
Holding current IH 60 mA

PAH400N8 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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PAH400N8
 datasheet

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 datasheet #2

Description

PDT400N8 PDH400N8 THYRISTOR PCH400N8 PAT400N8 400A Avg 800 Volts PAH400N8 ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:[mm] ■最大定格 Maximum Ratings 項 目 記号 耐圧クラス Grade 単位 Parameter Symbol Unit PDT/PDH/PCH/PAT/PAH400N8 くり返しピークオフ電圧 V 800 V DRM Repetitive Peak Off-State Voltage 非くり返しピークオフ電圧 V 900 V DSM Non Repetitive Peak Off-State Volt