PAT2008 SCR-module DATASHEET

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PAT2008 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 200 A
Maximum RMS on-state current IT(RMS) 314 A
Non repetitive surge peak on-state current ITSM 4000 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.23 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.34 V
Triggering gate current IGT 150 mA
Holding current IH 60 mA

PAT2008 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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PAT2008 Datasheet. Page #1

PAT2008
 datasheet

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PAT2008
 datasheet #2

Description

PDT PDH PCH 2008 THYRISTOR 200A Avg 800 Volts PAT PAH ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING K2 G2 (単位 Dimension:mm) PDT 1 2 3 4 K1 G1 PDH 1 2 3 4 K1 G1 PCH 1 2 3 4 K1 G1 K2 G2 PAT 4 1 2 3 K1 G1 PAH 4 1 2 3 K1 G1 ■最大定格 Maximum Ratings 耐圧クラス Grade 項   目 記号 単位 Parameter Symbol Unit PDT2008/PDH2008/PCH2008/PAT2008/PAH2008 くり返しピークオフ電圧 VDRM 800 V Repetitive Peak Off-S