PGH100N8 SCR-module DATASHEET

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PGH100N8 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 100 A
Non repetitive surge peak on-state current ITSM 2000 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..150 °C
Junction to case thermal resistance RTH(j-c) 0.25 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.15 V
Triggering gate current IGT 100 mA
Holding current IH 80 mA

PGH100N8 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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PGH100N8
 datasheet

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PGH100N8
 datasheet #2

Description

PGH100N8 THYRISTOR 100A Avg 800 Volts ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:[mm] 総合定格・特性 Part of Diode Bridge & Thyristor ■最大定格 Maximum Ratings 項 目 記号 単位 条件 定格値 Parameter Symbol Unit Conditions Max. Rated Value 平均出力電流 T =124℃(電圧印加なし) C 三相全波整流 100 Average Rectified Output Current Non-Biased for Thyristor Io A (AV) 3-Phas