PGH20016AM SCR-module DATASHEET

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PGH20016AM ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 200 A
Non repetitive surge peak on-state current ITSM 3200 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.25 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.35 V
Triggering gate current IGT 150 mA
Holding current IH 100 mA

PGH20016AM Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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 datasheet #2

Description

PGH20016AM THYRISTOR 200A Avg 1600 Volts ■回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) G R4 +5 -6 AC1 AC2 AC3 総合定格・特性 Part of Diode Bridge & Thyristor ■最大定格 Maximum Ratings 項   目 記号 条   件 定格値 単位 Parameter Symbol Conditions Max. Rated Value Unit Tc=90℃ (電圧印加なし) 200 A 三相全波整流 Non-Bias 平均出力電流 I0 3-Phase Full (AV) Average Rect