PSKH161-20IO1 SCR-module DATASHEET

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PSKH161-20IO1 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 8 W
Maximum repetitive peak and off-state voltage VDRM 2000 V
Maximum average on-state current IT(AVR) 165 A
Maximum RMS on-state current IT(RMS) 300 A
Non repetitive surge peak on-state current ITSM 6000 A
Critical repetitive rate of rise of on-state current dI/dt 150 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.15 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.36 V
Triggering gate current IGT 150 mA
Holding current IH 150 mA

PSKH161-20IO1 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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PSKH161-20IO1 Datasheet. Page #1

PSKH161-20IO1
 datasheet

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PSKH161-20IO1
 datasheet #2

Description

ITRMS = 2x 300 A Thyristor Modules PSKT 161 ITAVM = 2x 165 A Thyristor/Diode Modules PSKH 161 VRRM = 2000-2200 V Preliminary Data Sheet 7 3 6 2 4 VRSM VRRM Type 5 1 VDSM VDRM V V Version 1 Version 1 2100 2000 PSKT 161/20io1 PSKH 161/20io1 2300 2200 PSKT 161/22io1 PSKH 161/22io1 3 6 7 1 5 4 2 Symbol Test Conditions Maximum Ratings PSKT ITRMS TVJ = TVJM 300 A ITAVM TC = 85°C; 180° sine 165 A 3 1 5 4 2 ITSM TVJ = 45°C; t = 10 ms (50 Hz) 6000 A VR = 0 t = 8.3 ms (60