PSKT170-18IO1 SCR-module DATASHEET

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PSKT170-18IO1 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 1800 V
Maximum average on-state current IT(AVR) 203 A
Maximum RMS on-state current IT(RMS) 350 A
Non repetitive surge peak on-state current ITSM 5400 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..130 °C
Junction to case thermal resistance RTH(j-c) 0.16 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.65 V
Triggering gate current IGT 150 mA
Holding current IH 150 mA

PSKT170-18IO1 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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PSKT170-18IO1 Datasheet. Page #1

PSKT170-18IO1
 datasheet

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PSKT170-18IO1
 datasheet #2

Description

ITRMS = 2x 350 A PSKT 170 Thyristor Modules ITAVM = 2x 203 A Thyristor/Diode Modules VRRM = 1200-1800 V Preliminary Data Sheet VRSM VRRM Type 3 VDSM VDRM 76 54 2 V V Version 1 1300 1200 PSKT 170/12io1 3 6 7 1 5 4 2 1500 1400 PSKT 170/14io1 1700 1600 PSKT 170/16io1 1 1900 1800 PSKT 170/18io1 Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 350 A ITAVM TC = 85°C; 180° sine 203 A ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz) 5400 A VR = 0 t = 8.3 ms (60 Hz) 5800 A