PSXT160-16 SCR-module DATASHEET

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PSXT160-16 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 85 A
Maximum RMS on-state current IT(RMS) 180 A
Non repetitive surge peak on-state current ITSM 1700 A
Critical repetitive rate of rise of on-state current dI/dt 150 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.3 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.74 V
Triggering gate current IGT 150 mA
Holding current IH 200 mA

PSXT160-16 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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PSXT160-16 Datasheet. Page #1

PSXT160-16
 datasheet

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 datasheet #2

Description

Thyristor Modules PSVT 160 ITRMS = 180 A PSXT 160 VRRM = 800 - 1600 V Preliminary Data Sheet V RSM V RRM Type Type V DSM V DRM 900 800 PSVT 160/08 PSXT 160/08 1300 1200 PSVT 160/12 PSXT 160/12 Base 1500 1400 PSVT 160/14 PSXT 160/14 1700 1600 PSVT 160/16 PSXT 160/16 PSVT PSXT Symbol Test Conditions Maximum Ratings ITRMS 180 A ITAVM TC = 63°C 180° sine, 115 A ITAVM TC = 85°C 180° sine, 85 A ITSM TVJ = 45°C t = 10 ms (50Hz), sine 1700 A VR = 0 t = 8.3 ms (60Hz)