R0809LC10B SCR DATASHEET

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R0809LC10B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1000 V
Maximum average on-state current IT(AVR) 809 A
Non repetitive surge peak on-state current ITSM 8000 A
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.03 K/W
Peak on-state voltage drop VTM 0.3 V

R0809LC10B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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R0809LC10B Datasheet. Page #1

R0809LC10B
 datasheet

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R0809LC10B
 datasheet #2

Description

Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R0809LC10x Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VDRM Repetitive peak off-state voltage, (note 1) 1000 V VDSM Non-repetitive peak off-state voltage, (note 1) 1000 V VRRM Repetitive peak reverse voltage, (note 1) 1000 V VRSM Non-repetitive peak reverse voltage, (note 1) 1100 V MAXIMUM OTHER RATINGS UNITS LIMITS IT(AV) Mean on-state current, Tsink=55°C, (note 2) 809 A