R1127NC32S SCR DATASHEET

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R1127NC32S ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 3200 V
Maximum average on-state current IT(AVR) 1127 A
Non repetitive surge peak on-state current ITSM 12800 A
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.02 K/W
Peak on-state voltage drop VTM 0.47 V

R1127NC32S Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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R1127NC32S Datasheet. Page #1

R1127NC32S
 datasheet

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R1127NC32S
 datasheet #2

Description

Date:- 18 Feb, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1127NC32# to R1127NC36# (Old Type Number: D315CH21-36) Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 3200-3600 V DRM VDSM Non-repetitive peak off-state voltage, (note 1) 3200-3600 V V Repetitive peak reverse voltage, (note 1) 3200-3600 V RRM V Non-repetitive peak reverse voltage, (note 1) 3300-3700 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I