S12M15600B SCR DATASHEET

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S12M15600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 120 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 250 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 0.65 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 8 mA
Holding current IH 20 mA
Package TO-220AB

S12M15600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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S12M15600B Datasheet. Page #1

S12M15600B
 datasheet

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 datasheet #2

Description

LITE-ON S12M15600B SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 12 AMPERES RMS Reverse Blocking Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L DIM. MIN. MAX. Blocking Voltage to 600 Volts M A C 14.22 15.88 On-State Current Rating of 12 Amperes RMS at 80℃ D B 9.65 10.67 Rugged, Economical TO220AB Package C 2.54 3.43 A K Glass Passivated Junctions for Reliability and Uniformity D 5.84 6.86 E Minimum and Maximum Values of IGT, VGT an IH