S1PHB55-16 SCR-module DATASHEET

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S1PHB55-16 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 55 A
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.9 K/W

S1PHB55-16 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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S1PHB55-16
 datasheet

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 datasheet #2

Description

S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V S1PHB55-08 900 800 S1PHB55-12 1300 1200 S1PHB55-14 1500 1400 S1PHB55-16 1700 1600 S1PHB55-18 1900 1800 Symbol Test Conditions Maximum Ratings Unit IdAV TK=85oC, module 55 A IdAVM module 55 IFRMS, ITRMS per leg 41 TVJ=45oC t=10ms (50Hz), sine 550 VR=0 t=8.3ms (60Hz), sine 600 ITSM, IFSM A TVJ=TVJM t=10ms(50Hz), sine 500 VR=0 t=8.3ms(60Hz), sine 5