S1U50100A SCR DATASHEET

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S1U50100A ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 100 V
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 10 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 35 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 150 K/W
Junction to case thermal resistance RTH(j-c) 75 K/W
Triggering gate voltage VGT 0.62 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.02 mA
Holding current IH 0.5 mA
Package TO-92

S1U50100A Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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 datasheet #2

Description

LITE-ON S1U50-A SERIES SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 1 AMPERES RMS Reverse Blocking Thyristors 100 thru 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other TO-92 Logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 4.45 4.70 On– State Current Rating of 0.8 Amperes RMS at 80℃ B 4.32 5.33 High Surge Current Capability — 10 Amperes Minimum and Maximum Values of IGT, VGT and IH S