S4M02-600F SCR DATASHEET

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S4M02-600F ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 25 A
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 75 K/W
Junction to case thermal resistance RTH(j-c) 7 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-225

S4M02-600F Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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S4M02-600F Datasheet. Page #1

S4M02-600F
 datasheet

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S4M02-600F
 datasheet #2

Description

LITE-ON S4M02-600F SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 4 AMPERES RMS Reverse Blocking Thyristors 600 VOLTS TO-126 FEATURES Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate MAXIMUM RATINGS (Tj= 25℃unless otherwi