S8M02-600B SCR DATASHEET

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S8M02-600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 80 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 15 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 0.65 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 0.03 mA
Holding current IH 0.5 mA
Package TO-220AB

S8M02-600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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S8M02-600B Datasheet. Page #1

S8M02-600B
 datasheet

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 datasheet #2

Description

LITE-ON S8M02-B SERIES SEMICONDUCTOR Sensitive Gate SCRs Sillicon Controlled Rectifiers 8 AMPERES RMS Reverse Blocking Thyristors 600 thru VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage to 600 Volts DIM. MIN. MAX. M A On-State Current Rating of 8 Amperes RMS at 80℃ C 14.22 15.88 D B 9.65 10.67 High Surge Current Capability - 80 Amperes C A 2.54 3.43 Rugged, Economical TO220AB Package K D 5.84 6.86 Glass Passivated Junctions for Reliability and Uniformit