SDT165GK12 SCR-module DATASHEET

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SDT165GK12 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 165 A
Maximum RMS on-state current IT(RMS) 300 A
Non repetitive surge peak on-state current ITSM 6000 A
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.15 K/W

SDT165GK12 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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SDT165GK12 Datasheet. Page #1

SDT165GK12
 datasheet

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SDT165GK12
 datasheet #2

Description

STD/SDT165 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STD/SDT165GK08 900 800 STD/SDT165GK12 1300 1200 STD/SDT165GK14 1500 1400 STD/SDT165GK16 1700 1600 STD/SDT165GK18 1900 1800 STD/SDT165GK20 2100 2000 STD/SDT165GK22 2300 2200 Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS TVJ=TVJM 300 A ITAVM, IFAVM TC=85oC; 180o sine 165 TVJ=45oC t=10ms (50Hz), sine 6000 VR=0 t=8.3ms (60Hz), sine 6400 ITSM, IFSM A