SDT200GK08 SCR-module DATASHEET

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SDT200GK08 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 200 A
Maximum RMS on-state current IT(RMS) 314 A
Non repetitive surge peak on-state current ITSM 8000 A
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.14 K/W

SDT200GK08 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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SDT200GK08 Datasheet. Page #1

SDT200GK08
 datasheet

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SDT200GK08
 datasheet #2

Description

STD/SDT200 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STD/SDT200GK08 900 800 STD/SDT200GK12 1300 1200 STD/SDT200GK14 1500 1400 STD/SDT200GK16 1700 1600 STD/SDT200GK18 1900 1800 Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS TVJ=TVJM 314 A ITAVM, IFAVM TC=85oC; 180o sine 200 TVJ=45oC t=10ms (50Hz), sine 8000 VR=0 t=8.3ms (60Hz), sine 8500 ITSM, IFSM A TVJ=TVJM t=10ms(50Hz), sine 7000 VR=0 t=8.3ms(60H