SEMIX141KT16S SCR-module DATASHEET

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SEMIX141KT16S ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 140 A
Non repetitive surge peak on-state current ITSM 3400 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..130 °C
Junction to case thermal resistance RTH(j-c) 0.21 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.65 V
Triggering gate current IGT 150 mA
Holding current IH 100 mA

SEMIX141KT16S Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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SEMIX141KT16S Datasheet. Page #1

SEMIX141KT16S
 datasheet

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SEMIX141KT16S
 datasheet #2

Description

SEMiX141KT16s Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 140 A sinus 180° Tc =100°C 105 A ITSM Tj =25°C 3400 A 10 ms Tj =130°C 3000 A i2t Tj =25°C 57800 A²s 10 ms Tj =130°C 45000 A²s VRSM 1700 V SEMiX® 1s VRRM 1600 V VDRM 1600 V (di/dt)cr Tj = 130 °C 200 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Rectifier Thyristor Module Tj -40 ... 130 °C SEMiX141KT16s Module Tstg -40 ... 125 °C Features Visol 1min 4000 V AC sinus 50Hz 1s