SEMIX302KH16S SCR-module DATASHEET

DATASHEET SEARCH FORM

SEMIX302KH16S ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 320 A
Non repetitive surge peak on-state current ITSM 9300 A
Critical repetitive rate of rise of on-state current dI/dt 130 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..130 °C
Junction to case thermal resistance RTH(j-c) 0.09 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 200 mA
Holding current IH 150 mA

SEMIX302KH16S Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

SEMIX302KH16S Datasheet. Page #1

SEMIX302KH16S
 datasheet

Page #2

SEMIX302KH16S
 datasheet #2

Description

SEMiX302KH16s Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 300 A sinus 180° Tc =100°C 230 A ITSM Tj =25°C 9300 A 10 ms Tj =130°C 8000 A i2t Tj =25°C 432000 A²s 10 ms Tj =130°C 320000 A²s VRSM 1700 V SEMiX® 2s VRRM 1600 V VDRM 1600 V (di/dt)cr Tj = 130 °C 130 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Rectifier Thyr./Diode Module Tj -40 ... 130 °C SEMiX302KH16s Module Tstg -40 ... 125 °C Features Visol 1min 4000 V AC sinus 50Hz