SK35BZ12 SCR-module DATASHEET

DATASHEET SEARCH FORM

SK35BZ12 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 25 A
Non repetitive surge peak on-state current ITSM 370 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 1.7 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.2 V
Triggering gate current IGT 100 mA
Holding current IH 80 mA

SK35BZ12 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

SK35BZ12 Datasheet. Page #1

SK35BZ12
 datasheet

Page #2

SK35BZ12
 datasheet #2

Description

SK 35 BZ Characteristics Symbol Conditions Values Units SEMITOP® 2 1-phase bridge rectifier with one diode arm and one thyristor arm SK 35 BZ Thyristor