SK75TAE12 SCR-module DATASHEET

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SK75TAE12 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 75 A
Non repetitive surge peak on-state current ITSM 1250 A
Critical repetitive rate of rise of on-state current dI/dt 125 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..130 °C
Junction to case thermal resistance RTH(j-c) 0.6 K/W
Triggering gate voltage VGT 1.98 V
Peak on-state voltage drop VTM 1.2 V
Triggering gate current IGT 100 mA
Holding current IH 250 mA

SK75TAE12 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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Description

SK 75 TAE Characteristics Symbol Conditions Values Units SEMITOP®2 Thyristor and Diode separated in the same Thyristor housing SK 75 TAE Target Data