SKKT58B16E SCR-module DATASHEET

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SKKT58B16E ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1600 V
Maximum average on-state current IT(AVR) 55 A
Non repetitive surge peak on-state current ITSM 1500 A
Critical repetitive rate of rise of on-state current dI/dt 140 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..130 °C
Junction to case thermal resistance RTH(j-c) 0.47 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 100 mA
Holding current IH 150 mA
Package SEMIPACK1

SKKT58B16E Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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SKKT58B16E Datasheet. Page #1

SKKT58B16E
 datasheet

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SKKT58B16E
 datasheet #2

Description

SKKT 58B16 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 55 A sinus 180° Tc =100°C 41 A ITSM Tj =25°C 1500 A 10 ms Tj =130°C 1200 A i2t Tj =25°C 11250 A²s 10 ms Tj =130°C 7200 A²s VRSM 1700 V SEMIPACK® 1 VRRM 1600 V VDRM 1600 V Thyristor Modules (di/dt)cr Tj = 130 °C 140 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Tj -40 ... 130 °C SKKT 58B16 E Module Tstg -40 ... 125 °C Features Visol 1min 3000 V a.c.; 50 Hz; r.m.s. 1s •