SKT1200-18E SCR DATASHEET

DATASHEET SEARCH FORM

SKT1200-18E ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1800 V
Maximum average on-state current IT(AVR) 1200 A
Non repetitive surge peak on-state current ITSM 30000 A
Critical repetitive rate of rise of on-state current dI/dt 125 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.02 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.65 V
Triggering gate current IGT 250 mA
Holding current IH 250 mA

SKT1200-18E Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

SKT1200-18E Datasheet. Page #1

SKT1200-18E
 datasheet

Page #2

SKT1200-18E
 datasheet #2

Description

SKT 1200/18 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 1200 A sinus 180° Tc =100°C 840 A ITSM Tj =25°C 30000 A 10 ms Tj =125°C 25500 A i2t Tj =25°C 4500000 A²s 10 ms Tj =125°C 3251250 A²s VRSM 1800 V Capsule Thyristor VRRM 1800 V VDRM 1800 V (di/dt)cr Tj = 125 °C 125 A/µs (dv/dt)cr Tj = 125 °C 1000 V/µs Line Thyristor Tj -40 ... +125 °C SKT 1200/18 E Module Tstg -40 ... +130 °C Features Characteristics • Hermetic