SKT50-12E SCR DATASHEET

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SKT50-12E ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 50 A
Maximum RMS on-state current IT(RMS) 78 A
Non repetitive surge peak on-state current ITSM 1050 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..130 °C
Junction to case thermal resistance RTH(j-c) 0.57 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 150 mA
Holding current IH 100 mA
Package TO-208AC

SKT50-12E Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

SKT 50 THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units Stud Thyristor Line Thyristor SKT 50